AOT412/aob412l v ds 100v i d (at v gs =10v) 60a r ds(on) (at v gs =10v) < 15.8m w r ds(on) (at v gs = 7v) < 19.4m w symbol v ds v gs i dm i as ,i ar e as ,e ar t j , t stg symbol t 10s steady-state steady-state r q jc p d maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.7 48 1 units maximum junction-to-ambient a t c =100c w power dissipation a p dsm w t a =70c 150 1.7 t a =25c power dissipation b 47 a t a =25c i dsm a t a =70c i d 60 44 t c =25c parameter absolute maximum ratings t a =25c unless otherwise noted avalanche energy l=0.1mh c mj avalanche current c 6.6 continuous drain current 110 8.2 a the AOT412 & aob412l are fabricated with sdmos tm trench technology that combines excellent r ds(on) with low gate charge & low q rr .the result is outstanding efficiency with controlled switching behavior. this universal technology is well suited for pwm, load switching and general purpose applications. v 25 gate-source voltage drain-source voltage 100 v maximum units c/w r q ja 15 40 18 junction and storage temperature range -55 to 175 c thermal characteristics 140 pulsed drain current c continuous drain current parameter typ max t c =25c 2.6 75 t c =100c g d s to220 g s d d to-263 d 2 pak d g s www.freescale.net.cn 1/7 100v n-channel mosfet general description features
symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 10 t j =55c 50 i gss 100 na v gs(th) gate threshold voltage 2.6 3.2 3.8 v i d(on) 140 a 13.2 15.8 t j =125c 25 30 15.5 19.4 m w 12.9 15.5 m w 15.2 19.1 m w g fs 30 s v sd 0.65 1 v i s 60 a c iss 2150 2680 3220 pf c oss 180 260 340 pf c rss 60 100 140 pf r g 0.5 1 1.5 w q g (10v) 36 45 54 nc q gs 14 17 20 nc q gd 9 15 21 nc t d(on) 19 ns t r 16 ns t d(off) 27 ns t f 10 ns t rr 15 22 29 ns q rr 67 96 125 nc body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=500a/ m s v gs =0v, v ds =50v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =v gs , i d =250 m a v ds =0v, v gs = 25v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage static drain-source on-resistance r ds(on) m w to220 i s =1a,v gs =0v v ds =5v, i d =20a v gs =7v, i d =20a to220 v gs =10v, i d =20a to263 v gs =7v, i d =20a to263 gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =50v, i d =20a gate source charge gate drain charge body diode reverse recovery charge i f =20a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =50v, r l =2 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 15 0c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175c may be used if the pcb allow s it. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse ratin g. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. www.freescale.net.cn 2/7 AOT412/aob412l 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 20 40 60 80 100 0 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 11 12 13 14 15 16 17 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =7v i d =20a v gs =10v i d =20a 8 13 18 23 28 33 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =7v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 120 140 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) 6.5v 10v 6v 7v v gs =5.5v 7.5v www.freescale.net.cn 3/7 AOT412/aob412l 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 2 4 6 8 10 0 10 20 30 40 50 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 400 800 1200 1600 2000 2400 2800 3200 3600 0 20 40 60 80 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 1000 2000 3000 4000 5000 1e-05 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q jc normalized transient thermal resistance c oss c rss v ds =50v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100 m s r q jc =1c/w www.freescale.net.cn 4/7 AOT412/aob412l 100v n-channel mosfet
typical electrical and thermal characteristics 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note g) z q q q q ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1 10 100 1 10 100 1000 time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note f) current rating i d (a) t a =25c 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note g) power (w) t a =25c t a =150c t a =100c t a =125c r q ja =48c/w www.freescale.net.cn 5/7 AOT412/aob412l 100v n-channel mosfet
typical electrical and thermal characteristics 20 60 100 140 180 220 0 5 10 15 20 25 30 i s (a) figure 17: diode reverse recovery charge and peak current vs. conduction current q rr (nc) 0 10 20 30 40 50 i rm (a) di/dt=800a/ m s 125oc 125oc 25oc 25oc q rr i rm 20 40 60 80 100 120 140 160 180 0 200 400 600 800 1000 di/dt (a/ m mm m s) figure 19: diode reverse recovery charge and peak current vs. di/dt q rr (nc) 0 10 20 30 40 50 i rm (a) 125oc 125oc 25oc 25oc i s =20a q rr i rm 0 5 10 15 20 25 30 0 5 10 15 20 25 30 i s (a) figure 18: diode reverse recovery time and softness factor vs. conduction current t rr (ns) 0 0.5 1 1.5 2 s di/dt=800a/ m s 125oc 125oc 25oc 25oc t rr s 0 5 10 15 20 25 30 35 0 200 400 600 800 1000 di/dt (a/ m mm m s) figure 20: diode reverse recovery time and softness factor vs. di/dt t rr (ns) 0 0.5 1 1.5 2 s 125oc 25oc 25oc 125oc i s =20a t rr s www.freescale.net.cn 6/7 AOT412/aob412l 100v n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr www.freescale.net.cn 7/7 AOT412/aob412l 100v n-channel mosfet
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